BT151 SCR Thyristor Series

Place of Origin:China Jiangsu	Model Number:009
Brand Name:DongGuang

Company Info

Company Published: 2007
Online Postings: Products , Selling Leads
Country/Territory: China
Business Type: Manufacturer
Number of Employees: 501 - 1000 People

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Terms of Payment: L/C,T/T

Supply Ability: 500000 Piece/Pieces per Day

Minimum Order: 500 Piece/Pieces

Detailed Product Description

Features:

Ensured reliability and consistency by glassivated surface;
Sensitive gate trigger current;
Low thermal resistance, strong anti-surge ability;
Complying with ROHS environmental package and UL security standards.

Major applications:

Relay switch, Light drivers;
Small motor controller;
Large SCR gate drivers;
Transducer and logic integrated circuit;
Motorcycle ignition

Package:

TO-92, TO-126, TO-202-2, TO-202-3, TO-220, TO-3P

Maximum Ratings

Parameter	Symbol	Value	Unit	Test condition
Peak repetitive off-state Voltage	V_DRMV_RRM	600	V
ON-state RMS current	I_T (RMS)	12	A	Tc=105
Average on-state current	I_T (AV)	8	A	Tc=105
NON repetitive surge peak on-state current	I_TSM	140	A	tp=10ms, Tj=25
Critical rate of rise on-state current	Di/dt	50	A/μS	F=60HZ
Peak gate current	I_GM	4	A	tp=20μS
Average gate power dissipation	P_G (AV)	1	W
Storage temperature range	T_stg	-40~+150
Operating junction temperature range	Tj	-40~+125

Electrical characteristics (Tj=25 unless otherwise specified)

Parameter	Symbol	Value	Unit	Test conditions
Gate trigger current	I_GT	2-15	mA	V_D=12V, R_L=33Ω
Gate trigger voltage	V_GT	≤1.3	V	V_D=12V, R_L=33Ω
Hold current	I_H	≤30	mA	I_T=500mA
Critical rate of rise off-state voltage	dv/dt	≥50	V/μS	V_D=67%V_DRM
ON-state voltage	V_TM	≤1.6	V	I_TM=24A, tp=380μS
OFF-state leakage current	I_DRM,I_RRM	≤5	μA	V_D=V_DRM,V_R=V_RRM, Tj=125
Thermal resistance	Rth (j-c)	≤1.3	/W
Thermal resistance	Rth (j-a)	60	/W